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Photoresists and Photoresist Ancillaries

$8,568.00

This report delves into the market segments that supply photoresist and associated chemistries used for developing photoresists.

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Product Description

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i. Report Scope
ii. Acronyms and Definitions and Keywords
1. Executive Summary
2. Market for Photoresists & Extensions & Ancillaries
2.1 Industry Roadmaps
2.1.1 Industry Roadmaps
2.1.2 Litho Roadmaps
2.2 Market Dynamics
2.2.1 PR Thickness Reduction
2.2.2 ArFi Integration Requires Additional Layers and $
2.2.3 MP vs. SE Litho
2.2.4 MP Variations fro 1D vs. 2D
2.2.5 MP Overlay Requirements
2.2.6 EUVL Lower Cost & Better Pattern Fidelity
2.2.7 “7nm-node” Litho Can Be Done by ArFi MP
2.2.8 MP Overlay Spec Challenging
2.2.9 Advanced Nodes Push Litho Resolution – EXT Vital
2.3 Extensions of Resolution with Materials
2.3.1 Shrinks
2.3.2 Spin-On Trim
2.3.3 Tri-Layer Resist (TLR)
2.3.3.1 TLR Seminal Patent
2.3.3.2 TLR Resolution
2.3.3.3 TLR Si Hard Mask (Si-HM)
2.3.3.4 TLR up to 5 Layers
2.3.4 Spin-On Metal Hard Mask (SOMHM)
2.4 Negative Tone Materials
2.4.1 Tone-Reversal Mechanism
2.4.2 Improved LWR with NTD for LELELE MP
3. Market Trends & Statistics: PR & EXT & ANC
3.1 IC Fab Industry
3.1.1 Intel
3.1.2 Samsung
3.1.3 TSMC
3.1.4 IC Industry Mature Revenue Growth
3.1.5 Wafer Area Growth Forecast by TECHCET
3.1.6 IC Process Materials Market
3.1.7 Exchange Rate
3.2 Litho Materials Supply Chain Trends
3.2.1 Single versus Multiple Sources
3.2.2 IC Litho Materials Market Dynamics
3.2.3 KrF Litho Growth for 3D NAND
3.2.4 Pricing Trends
3.2.5 Market Forecast Inputs
3.2.6 Photoresist Market Shares
3.2.7 PR + EXT Market Share Analysis
3.2.8 WW Photoresist Revenue History and Forecast
3.2.9 WW Litho EXT Revenue History & Forecast
3.2.10 Ancillaries Materials & Applications
3.2.11 Ancillaries Revenue History and Forecast
3.2.12 Total WW PR + EXT + ANC Revenue History & Forecast
4. Next Generation Lithography (NGL)
4.1 Extreme Ultra-Violet (EUV)
4.1.1 Expensive but Lower Cost than ArFi MP for “7nm node”
4.1.2 EUVL Least Expensive Option for “10nm node” M1 Patterning
4.1.3 EUVL Developer Must be Tuned to PR Chemistry
4.2 Nano-Imprint Lithography (NIL)
4.2.1 NIL for Memory ICs
4.3 Direct Self-Assembly (DSA)
4.3.1 DSA delayed
4.4 E-Beam Direct Write (EBDW)
5. Environmental and Regulatory issues
5.1 REACH and PFOS/PFOA related chemistries
5.2 Alternative Developers including TBAH
5.3 Alternative Solvents
6. Litho Materials Supplier Profiles and News
6.1 Avatar (J.T.Baker)
6.2 Brewer Science / Nissan Chemical
6.3 Dow (Rohm and Haas)
6.4 Fuji Film (Hunt)
6.5 Japan Silicon Rubber
6.6 Kempur
6.7 Merck (AZ)
6.8 SACHEM
6.9 Shin-Etsu
6.10 Sumitomo
6.11 Tokyo Ohka Kogyo
7. Figure Sources / Website References

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